Highly selective nitride etching employing surface mediated...

Details Highly selective nitride etching employing surface mediated... Highly selective nitride etching employing surface mediated...

2007-09-11

2007-09-11

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S724000, C438S723000, C216S037000

Reexamination Certificate

active

10835990

ABSTRACT:
Disclosed is a method of selectively etching nitride in a chemical downstream etching process. The invention begins by placing a wafer having oxide regions and nitride regions in a chamber. Then, the invention performs a chemical downstream etching process using CH2F2to etch and convert the nitride regions into surface mediated uniform reactive film (SMURF) regions comprising (NH4)2SiF6. This process then rinses the surface of the wafer with water to remove the surface mediated uniform reactive film regions from the wafer, leaving the oxide regions substantially unaffected. The chemical downstream etching process is considered selective because it etches the nitride regions at a higher rate than the oxide regions.

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