Highly selective high aspect ratio oxide etch method and product

Details Highly selective high aspect ratio oxide etch method and product Highly selective high aspect ratio oxide etch method and product

1993-11-30

1995-11-21

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 79, H01L 2100, H05H 100

Patent

active

054683408

ABSTRACT:
A method for rapid anisotropic dry etching of oxide compounds in high aspect ratio openings which etching method is highly selective to metal salicides and which method employs plasma gases of CHF.sub.3, N.sub.2 and a high flow rate of He at a high pressure and products made by the process.

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