Highly selective dry etching process

Details Highly selective dry etching process Highly selective dry etching process

1998-08-25

2000-05-30

Hiteshew, Felisa

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

723724, 723743, 723744, H01L 213065

Patent

active

060690879

ABSTRACT:
A plasma-enhanced method of selectively etching silicon dielectrics, such as silicon nitride, silicon oxide, silicon oxynitride, or silicon oxime relative to photoresist in a single step. A combination of a fluorocarbon selectivity agent such as difluoromethane, and a fluorocarbon etchant gas such as carbon tetrafluoride or pentafluoroethane, is used as the source gas for the plasma etch. The source gas concentration is within the range of approximately 1:2 to 2:1 selectivity agent to etchant gas, and the resultant plasma etches silicon dielectric at a rate approximately four times as fast as photoresist. The process is particularly useful for the etching of silicon dielectric spacers, or silicon nitride layers in the initial stages of a LOCOS process.

REFERENCES:
patent: 4511430 (1985-04-01), Chen et al.
patent: 4529476 (1985-07-01), Kawamoto et al.
patent: 4687543 (1987-08-01), Bowker
patent: 4793897 (1988-12-01), Dunfield et al.
patent: 5269879 (1993-12-01), Rhoades et al.
patent: 5286344 (1994-02-01), Blalock et al.
patent: 5644153 (1997-07-01), Keller
patent: 5658425 (1997-08-01), Halman et al.
patent: 5662770 (1997-09-01), Donohoe
patent: 5700580 (1997-12-01), Becker et al.
patent: 5756216 (1998-05-01), Becker et al.
patent: 5786276 (1998-07-01), Brooks et al.
patent: 5814563 (1998-09-01), Ding et al.
patent: 5880036 (1999-03-01), Becker et al.
T.D. Mantei, High Density Sources for Plasma Etching, J. Appl. Phys. 69, 1991, pp. 137-156.

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