Highly selective chemical dry etching of silicon nitride over si

Details Highly selective chemical dry etching of silicon nitride over si Highly selective chemical dry etching of silicon nitride over si

1998-03-26

2000-05-09

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

723724, H01L 213065

Patent

active

06060400&

ABSTRACT:
A dry etch process is described for removing silicon nitride masks from silicon dioxide or silicon for use in a semiconductor fabrication process. A remote plasma oxygen
itrogen discharge is employed with small additions of a fluorine source. The gas mixture is controlled so that atomic fluorine within the reaction chamber is maintained at very low flows compared with the oxygen and nitrogen reactants. Parameters are controlled so that an oxidized reactive layer is formed above any exposed silicon within a matter of seconds from initiating etching of the silicon nitride. Etch rates of silicon nitride to silicon of greater than 30:1 are described, as well as etch rates of silicon nitride to silicon dioxide of greater than 70:1.

REFERENCES:
patent: 4174251 (1979-11-01), Paschke
patent: 4175235 (1979-11-01), Niwa et al.
patent: 4568410 (1986-02-01), Thornquist
patent: 4671851 (1987-06-01), Beyer et al.
patent: 4786352 (1988-11-01), Benzing
patent: 5437765 (1995-08-01), Loewenstein
patent: 5468665 (1995-11-01), Lee et al.
patent: 5472508 (1995-12-01), Saxena
patent: 5491099 (1996-02-01), Hsu
patent: 5505816 (1996-04-01), Barnes et al.
patent: 5693979 (1997-12-01), Sato
patent: 5786276 (1998-07-01), Brooks et al.
patent: 5861065 (1999-01-01), Johnson
Matsuo et al., "Role of N2 addition on CF4/02 remote plasma chemical dry etching of polycrystalline silicon", J. Vac. Sci. Technol. A 15(4), 1997 American Vacuum Society, Jul./Aug. 1997, pp. 1801-1813.
Kastenmeier et al., "Chemical dry etching of silicon nitride and silicon dioxide using CF4/02/N2 gas mixtures", J. Vac. Sci. Technol. A 14(5), 1996 American Vacuum Society, Sep./Oct. 1996, pp. 2802-2813.

Affiliated with

Also associated with

Rating

Highly selective chemical dry etching of silicon nitride over si does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Highly selective chemical dry etching of silicon nitride over si, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Highly selective chemical dry etching of silicon nitride over si will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1064643