Highly scalable FLASH EEPROM cell

Details Highly scalable FLASH EEPROM cell Highly scalable FLASH EEPROM cell

1996-09-09

1998-09-29

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257322, 257326, H01L 29788, H01L 29792

Patent

active

058148540

ABSTRACT:
The present invention is directed toward a novel type of FLASH EEPROM cell that is highly scalable in size, easy to fabricate, reliable and capable of in-system programmability. The semiconductor memory cell comprises a lightly doped n- region including a channel region, a first insulating layer overlying portions of said n- region, and a floating gate overlying said first insulating layer. The cell further includes a second insulating layer overlying said floating gate and a control gate overlying second insulating layer.

REFERENCES:
patent: 4258378 (1981-03-01), Wall
patent: 4302766 (1981-11-01), Guterman et al.
patent: 4423371 (1983-12-01), Senturia et al.

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