Highly-planar interlayer dielectric thin films in integrated cir

Details Highly-planar interlayer dielectric thin films in integrated cir Highly-planar interlayer dielectric thin films in integrated cir

1995-06-06

1997-01-28

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257641, 257637, 257650, 257758, H01L 2358, H01L 2348

Patent

active

055980287

ABSTRACT:
A planarization process for the manufacturing of highly-planar interlayer dielectric thin films in integrated circuits, particularly in non-volatile semiconductor memory devices, comprises the steps of: forming a first barrier layer over a semiconductor substrate wherein integrated devices have been previously obtained; forming a second layer of oxide containing phosphorous and boron over the first undoped oxide the concentration of boron being lower than the concentration of phosphorous; forming a third layer of oxide containing phosphorous and boron over the second oxide layer, the concentration of phosphorous being lower than or equal to the concentration of boron; performing a thermal process at a temperature sufficient to melt the third oxide layer, to obtain a planar surface.

REFERENCES:
patent: 3833919 (1974-09-01), Naber
patent: 3925572 (1975-12-01), Naber
patent: 4582745 (1986-04-01), Schnable
patent: 4835597 (1989-05-01), Okuyama et al.
patent: 5136344 (1992-08-01), Pronko
patent: 5172202 (1992-12-01), Kazuo
patent: 5332924 (1994-07-01), Kobayashi
Kern et al., "Chemically Vapor-Deposited Borophosphosilicate Glasses for Silicon Device Applications," RCA Review 43(3):423-457, Sep. 1982.

Affiliated with

Also associated with

Rating

Highly-planar interlayer dielectric thin films in integrated cir does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Highly-planar interlayer dielectric thin films in integrated cir, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Highly-planar interlayer dielectric thin films in integrated cir will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-942996