Highly integrated semiconductor wiring structure

Details Highly integrated semiconductor wiring structure Highly integrated semiconductor wiring structure

1994-07-27

1996-10-22

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257775, 257776, H01L 2348

Patent

active

055679897

ABSTRACT:
In a highly integrated semiconductor wiring structure having a plurality of wiring layers and a self-aligned contact hole formed therebetween, the wiring layer is formed such that a portion where a contact hole will be formed is formed to a first wiring width and a remaining portion is formed to a second wiring width being wider than the first wiring width. In the method for manufacturing such a structure, the contact hole is formed in self-alignment fashion, and thus, a short which may occur due to misalignment can be prevented.

REFERENCES:
patent: 5432381 (1995-07-01), Melzner

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