Highly integrated semiconductor memory device with trench capaci

Details Highly integrated semiconductor memory device with trench capaci Highly integrated semiconductor memory device with trench capaci

1991-01-04

1992-06-23

Hille, Rolf

357 51, 357 55, H01L 2968, H01L 2702, H01L 2906

Patent

active

051247658

ABSTRACT:
A highly integrated semiconductor memory device comprises a plurality of memory cells formed by alternately disposing a stack-type capacitor cell and a combined stack-trench type capacitor cell both in row and column directions. Each storage electrode of the capacitor of the memory cell is extended to overlap with the storage electrode of the capacitor of the adjacent memory cell. The combined stack-trench type capacitor is formed into the substrate to increase the storage capacitance thereof which allow the storage capacitance of the stack-type capacitor to increase by extending the storage electrode of the capacitor. Due to the alternate arrangement of stack-trench type capacitor and stack-type capacitor, step coverage, leakage current and soft errors of stack-trench type capacitor are prevented.

REFERENCES:
patent: 4974040 (1990-11-01), Taguchi et al.

Affiliated with

Also associated with

Rating

Highly integrated semiconductor memory device with trench capaci does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Highly integrated semiconductor memory device with trench capaci, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Highly integrated semiconductor memory device with trench capaci will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-936874