Highly integrated semiconductor device with silicide layer...

Details Highly integrated semiconductor device with silicide layer... Highly integrated semiconductor device with silicide layer...

2006-08-29

2006-08-29

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S388000, C257S412000, C257S413000

Reexamination Certificate

active

07098514

ABSTRACT:
Provided are a highly integrated semiconductor device with a silicide layer, which can secure a contact margin, and a method of manufacturing the highly integrated semiconductor device. The highly integrated semiconductor device includes a gate electrode formed on a semiconductor substrate. A source region and a drain region are formed in predetermined upper portions of the semiconductor substrate on two sides of the gate electrode such that each of the source region and the drain region includes a lightly doped drain (LDD) region and a heavily doped region. A suicide layer is formed on the gate electrode, the source region, and the drain region. The silicide layer has a sufficient thickness to function as an ohmic contact and is formed on the LDD region and the heavily doped region of each of the source region and the drain region.

REFERENCES:
patent: 6255703 (2001-07-01), Hause et al.
patent: 6902980 (2005-06-01), Wang et al.
patent: 10-0361533 (2002-11-01), None

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