Highly integrated mask ROM for coding data

Details Highly integrated mask ROM for coding data Highly integrated mask ROM for coding data

1999-11-30

2000-12-05

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257331, 257332, 257333, 257392, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 311199

Patent

active

061570699

ABSTRACT:
A method of fabricating a mask ROM includes forming a trench on a first conductivity type semiconductor substrate, implanting a second conductivity type impurity ion in at least a surface portion of the semiconductor substrate where the trench is formed, forming an insulating oxide layer on a surface of the semiconductor substrate, including a surface of the trench, forming gate oxide layers of both sides of the trench, forming first and second gates on the gate, oxide layers and forming a first conductivity type channel by implanting a first conductivity type impurity ion in one side of the trench. As such, the resulting mask ROM includes two transistors on either side of a trench having channels along the side walls of the trench. The resulting mask ROM has a reduced surface width, enhancing integration.

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Fujio Masuoka et al., "An 80 ns 1 Mbit MASK ROM with a New Memory Cell," Journal of Solid-State Circuits, vol. sc. 19, No. 5, Oct. 1984, pp. 651-657.

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