Highly integrated, high-speed memory with bipolar transistors

Details Highly integrated, high-speed memory with bipolar transistors Highly integrated, high-speed memory with bipolar transistors

1982-05-07

1985-08-13

Larkins, William D.

Static information storage and retrieval

Systems using particular element

Flip-flop

357 35, 357 92, 365155, 365179, 365181, H01L 2704, H03K 19091, G11C 1140

Patent

active

045354251

ABSTRACT:
A memory is described comprising static MTL memory cells for high operation speeds. The cell or primary injectors and the bit line injectors are coupled to each other by an angular injection coupling via the low-resistivity base region of the cell flip-flop transistors. This results in a signal path with reduced series resistance and thus higher signals and a faster read operation obtainable. The density is additionally increased by using in common the primary injectors and the bit line injectors of adjacent cells of the array.

REFERENCES:
patent: 3815106 (1974-06-01), Wiedmann
patent: 3986178 (1976-10-01), McElroy et al.
patent: 4144586 (1979-03-01), U
patent: 4375645 (1983-03-01), Funatsu
patent: 4412239 (1983-10-01), Iwasaki et al.

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