Highly efficient segmented word line MRAM array

Details Highly efficient segmented word line MRAM array Highly efficient segmented word line MRAM array

2007-02-27

2007-02-27

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

11093613

ABSTRACT:
In an MRAM array based on MTJs, the size of segmented word line select transistors and their associated connections become a significant overhead, especially when the operating point is chosen deep along the hard axis of the asteroid curve. This problem has been overcome by placing the big segmented word line select transistors under the MTJ array and reducing the overall MRAM cell array down to a level comparable to a simple Cross Point MRAM array.

REFERENCES:
patent: 6335890 (2002-01-01), Reohr et al.
patent: 6490217 (2002-12-01), DeBrosse et al.
patent: 6711053 (2004-03-01), Tang
patent: 6778429 (2004-08-01), Lu et al.
patent: 6816405 (2004-11-01), Lu et al.
patent: 6940749 (2005-09-01), Tsang
patent: 6982902 (2006-01-01), Gogl et al.
patent: 2002/0176272 (2002-11-01), De Brosse et al.
patent: 2004/0165424 (2004-08-01), Tsang
patent: 2004/0190360 (2004-09-01), Scheuerle
patent: 2004/0240265 (2004-12-01), Lu et al.

Affiliated with

Also associated with

Rating

Highly efficient segmented word line MRAM array does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Highly efficient segmented word line MRAM array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Highly efficient segmented word line MRAM array will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3824499