Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-08-02
2011-08-02
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257SE33065, C257S081000, C257S099000
Reexamination Certificate
active
07989828
ABSTRACT:
A nitride-based top emission type light emitting device and a method of manufacturing the same, the light emitting device including an n-nitride-based cladding layer, a p-nitride-based cladding layer, a nitride-based active layer, and a multiple p-ohmic contact layer. The multiple p-ohmic contact layer includes at least one pair of an ohmic modification layer and a transparent conducting layer. The ohmic modification layer includes a poly-crystal nitride layer or an amorphous nitride layer including nitrogen (N) combined with at least one of aluminum (Al), indium (In) or gallium (Ga). The ohmic modification layer is prepared in the form of a droplet or a thin film. Pores or dots are formed on the poly-crystal nitride layer or the amorphous nitride layer so as to provide the multiple p-ohmic contact layer with a photonic crystal effect.
REFERENCES:
patent: 6287947 (2001-09-01), Ludowise et al.
patent: 6495862 (2002-12-01), Okazaki et al.
patent: 6614060 (2003-09-01), Wang et al.
patent: 6847057 (2005-01-01), Gardner et al.
patent: 7244957 (2007-07-01), Nakajo et al.
patent: 7250635 (2007-07-01), Lee et al.
patent: 2004/0141333 (2004-07-01), Rattier et al.
patent: 2004/0188689 (2004-09-01), Shono et al.
patent: 2005/0285136 (2005-12-01), Ou et al.
patent: 2006/0054907 (2006-03-01), Lai
patent: 2006/0273333 (2006-12-01), Wu et al.
patent: 101027790 (2007-08-01), None
patent: 10173231 (1998-06-01), None
patent: 2003152221 (2003-05-01), None
patent: 1020050031720 (2005-04-01), None
patent: 1020050064556 (2005-06-01), None
Nitride-Based Light-Emitting Diodes With Ni/ITO p-Type Ohmic Contacts; Author: Y.C. Lin, et al.; IEEE Photonics Technology Letters; vol. 14, No. 12 pp. 1668-1670; Dec. 2002.
Enhanced Output Power of InGaN—GaN Light-Emitting Diodes With High-Transparency Nickel-Oxide-Indium-Tin-Oxide Ohmic Contacts; Author: Shyi-Ming Pan, et al.; IEEE Photonics Technology Letters; vol. 15, No. 5, pp. 646-648; May 2003.
Cantor & Colburn LLP
Hu Shouxiang
Samsung Electronics Co,. Ltd.
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