Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2007-10-03
2010-06-29
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C117S087000, C117S095000, C117S104000, C117S106000, C117S921000, C117S952000, C977S816000, C977S891000, C977S762000
Reexamination Certificate
active
07745315
ABSTRACT:
A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.
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Creighton J. Randall
Li Qiming
Wang George T.
Ashby Carol I
Sandia Corporation
Wilczewski M.
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