Higher selectivity, method for passivating short circuit...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S466000, C257SE21560

Reexamination Certificate

active

11231031

ABSTRACT:
Certain modifications and additions to the prior art short passivation technique have lead to improvements in the low light voltage of solar cells which are made using the improved passivation technique. Examples of the modifications include:1) reducing the voltage bias on the cell while increasing the time of application of the voltage;2) reversing the polarity of the voltage bias on the devices;3) alternating pulsing between forward and reverse polarity bias; or4) applying light energy simultaneously with an electrical bias voltage.

REFERENCES:
patent: 2005/0011550 (2005-01-01), Chittibabu et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Higher selectivity, method for passivating short circuit... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Higher selectivity, method for passivating short circuit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Higher selectivity, method for passivating short circuit... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3888401

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.