Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Charge transfer device
Reexamination Certificate
2007-05-15
2007-05-15
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Charge transfer device
C438S048000, C438S075000, C438S216000
Reexamination Certificate
active
10691080
ABSTRACT:
In accordance with the invention, an electrically conducting charge transfer channel is formed in a semiconductor substrate and an electrically insulating layer is formed on a surface of the substrate; a layer of gate electrode material is formed on the insulating layer. On the gate material layer is formed a first patterned masking layer having apertures that expose regions of the underlying gate material layer that are to form gate electrodes, and the first-pattern-exposed regions of the gate material layer are electrically doped. In addition, on the gate material layer is formed a second patterned masking layer having apertures that expose regions of the underlying gate material layer that are to form gaps between gate electrodes, and the second-pattern-exposed regions of the gate material layer are etched.
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Burke Barry E.
Suntharalingam Vyshnavi
Lober Theresa A.
Luu Chuong Anh
Massachusetts Institute of Technology
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