High yield semiconductor device and method of fabricating the sa

Details High yield semiconductor device and method of fabricating the sa High yield semiconductor device and method of fabricating the sa

1998-11-10

2000-02-29

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257383, 257384, 257388, 257408, H01L 2976

Patent

active

060312718

ABSTRACT:
A unit cell of a static random-access memory includes a laminated gate electrode structure adjacent to a diffusion layer. A top surface of the gate electrode structure is coated with a first silicide layer and the diffusion layer includes a second silicide layer. The second silicide layer is separated from the gate electrode structure by a distance that is the same as a width of a sidewall spacer on an opposite side of the gate electrode structure. The portion of the diffusion layer that is exposed between the second silicide layer and the gate electrode structure has a higher impurity concentration than the remainder of the diffusion layer to reduce or eliminate undesired leakage voltage.

REFERENCES:
patent: 5541434 (1996-07-01), Nicholls et al.
patent: 5600170 (1997-02-01), Sugiyama et al.
patent: 5818092 (1998-10-01), Bai et al.

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