High write selectivity and low power magnetic random access...

Details High write selectivity and low power magnetic random access... High write selectivity and low power magnetic random access...

2008-04-15

2008-04-15

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S129000, C365S158000

Reexamination Certificate

active

07359237

ABSTRACT:
A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells adjacent to the pillar write word line in the magnetic RAM with the pillar write word line form. According to the disclosed structure, each of the cells has a smaller bit size and a lower write current. This effectively reduces the power consumption of the MRAM.

REFERENCES:
patent: 5587943 (1996-12-01), Torok et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 6541815 (2003-04-01), Mandelman et al.
patent: 6639830 (2003-10-01), Heide
patent: 6642595 (2003-11-01), Hung et al.
patent: 6815290 (2004-11-01), Lin et al.
patent: 6855564 (2005-02-01), Cha
patent: 6865109 (2005-03-01), Covington
patent: 6955926 (2005-10-01), Chen et al.
patent: 7266486 (2007-09-01), Nahas
patent: 2002/0149962 (2002-10-01), Horiguchi
patent: 2003/0185065 (2003-10-01), Ishikawa
patent: 2004/0061156 (2004-04-01), Cha
patent: 2005/0030786 (2005-02-01), Deak
patent: 2005/0051839 (2005-03-01), Faltermeier et al.
patent: 2005/0127416 (2005-06-01), Han et al.
patent: 20012737759 (2001-05-01), None

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