Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-05-04
1993-11-23
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257409, H01L 2701, H01L 2976
Patent
active
052647200
ABSTRACT:
A high withstanding voltage transistor is provided with a substrate with its main surface at least part of which is electrically insulated, and a plurality of MOS type field effect transistors of the same channel type that are formed on the insulated main surface of the substrate, the channel regions of the number of MOS type field effect transistors are electrically separated respectively, the gates of the plurality of MOS type field effect transistors are mutually connected electrically, between and among the plurality of MOS type field effect transistors, the source of one transistor is connected to the drain of another transistor, and connecting in series the plurality of MOS type field effect transistors, they are made into a single transistor, thereby dividing the voltage applied in between the drain and the source of this high withstanding voltage transistor with depletion layer of the respective transistors and in turn improving the withstanding voltage of the whole.
REFERENCES:
patent: 4393577 (1981-12-01), Imai
patent: 4527181 (1985-07-01), Sasaki
patent: 4623908 (1986-11-01), Oshima et al.
patent: 4710794 (1987-12-01), Koshino et al.
patent: 4755482 (1988-07-01), Nagakubo
patent: 4803530 (1989-02-01), Taguchi et al.
patent: 4851363 (1989-07-01), Troxell et al.
patent: 4906587 (1990-03-01), Blake
patent: 4907041 (1990-03-01), Huang
patent: 4914491 (1990-04-01), Vu
patent: 4965872 (1990-10-01), Vasudev
patent: 4969023 (1990-11-01), Svedberg
patent: 4974041 (1990-11-01), Grinberg
patent: 4996575 (1991-02-01), Ipri et al.
patent: 5027177 (1991-06-01), Vasudev
patent: 5066993 (1991-11-01), Miura et al.
patent: 5072277 (1991-12-01), Sakakibara et al.
IEEE Transactions on Electron Device, vol. 38, No. 1, Jan. 1991, "A High-Voltage Polysilicon TFT with Multigate Structures"by Vemoto et al., pp. 95-99.
Japanese Patent Application Lai-Open SDM 88-168 pp. 49-56, "On Resistance of High Voltage SOI-MOSFET's", by Sasaki et al.
Muto Hiroshi
Yamaoka Masami
Hille Rolf
Loke Steven
Nippondenso Co. Ltd.
LandOfFree
High withstanding voltage transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High withstanding voltage transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High withstanding voltage transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1851559