High withstand voltage trenched MOS transistor and...

Details High withstand voltage trenched MOS transistor and... High withstand voltage trenched MOS transistor and...

2007-09-24

2008-12-16

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S332000, C257S333000, C257S334000, C257S213000, C257SE29201

Reexamination Certificate

active

07465989

ABSTRACT:
A high withstand voltage transistor includes: a gate electrode provided in a trench formed on a semiconductor substrate; a source and a drain which are respectively formed on a side of the gate electrode and another side of the gate electrode, and which are a predetermined distance away from the gate electrode; first electric field relaxation layers one of which is formed on a wall of the trench on the side of the source and another one of which is formed on a wall of the trench on the side of the drain; and second electric field relaxation layers one of which is formed between the source and the gate electrode, and another one of which is formed between the drain and the gate electrode.

REFERENCES:
patent: 04-251980 (1992-09-01), None
patent: 2004-039985 (2004-02-01), None

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