Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-24
2010-11-30
Fahmy, Wael M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S331000, C257S332000, C257S333000, C257S334000, C257S289000, C257S290000, C257S292000, C438S270000, C438S271000, C438S272000, C438S289000, C438S290000, C438S291000, C438S292000
Reexamination Certificate
active
07843020
ABSTRACT:
A high withstand voltage transistor is capable of preventing its gate oxidized film from being damaged by a surge voltage/current, and includes: a gate electrode provided in a trench formed on a semiconductor substrate; a source and a drain which are respectively formed on a side of the gate electrode and another side of the gate electrode, and which are a predetermined distance away from the gate electrode; first electric field relaxation layers one of which is formed on a wall of the trench on the side of the source and another one of which is formed on a wall of the trench on the side of the drain; and second electric field relaxation layers one of which is formed between the source and the gate electrode, and another one of which is formed between the drain and the gate electrode.
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Crite Antonio B
Fahmy Wael M
Harness & Dickey & Pierce P.L.C.
Sharp Kabushiki Kaisha
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