Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-02-26
1998-09-08
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, 257339, 257347, 257655, H01L 2976
Patent
active
058048642
ABSTRACT:
An n.sup.- layer is formed on a main surface of a p-type semiconductor substrate. A p.sup.- diffusion region is formed at a surface of n.sup.- layer. A p diffusion region is formed contiguous to one end of p.sup.- diffusion region. A plurality of p diffusion regions containing p-type impurity the concentration of which is higher than that of p.sup.- diffusion region are formed in p.sup.- diffusion region. A p diffusion region is formed such that it is spaced apart from p.sup.- diffusion region. A gate electrode is formed on a surface of n.sup.- layer positioned between p diffusion region and p.sup.- diffusion region with an oxide film interposed. A drain electrode is formed in contact with a surface of p diffusion region. Furthermore, an n diffusion region is formed adjacent to p diffusion region, and a source electrode is formed in contact with both a surface of n diffusion region and a surface p diffusion region.
REFERENCES:
patent: 5132753 (1992-07-01), Chang et al.
patent: 5349225 (1994-09-01), Redwine et al.
patent: 5498892 (1996-03-01), Walker et al.
"Realization of High Breakdown Voltage (>700V) In Thin SOI Devices", by S. Merchant et al., IEEE, 1991., Dec. 1991.
Modern Power Devices by b.J. Balign, pp. 92-99, 1987., Dec. 1987.
"Electronic Device for Increasing Withstand Voltage of SOI Separation Structure", by Akiyama et al., Semiconductor Electric Power Convention Joint Research Society, pp. 1-6, 1992., Dec. 1992.
"High Voltage Device Structures for Trench Isolated SOI Power ICs", by Yasuhara et al., A Material of the Research Society of the Institute of Electronics, pp. 69-74, 1992., Dec. 1992.
"A Versatile 700-1200-V IC Process for Analog and Switching Applications", by Adriaan W. Ludikhuize, IEEE Transactions on Electron Devices vol. 38, No. 7, Jul. 1991.
"Over 1000V n-ch LDMOSFET and p-ch LIGBT with JI RESURF Structure and Multiple Floating Field Plate", by Tomohide Terashima et al., ISPS-D 1995., Dec. 1995.
"Structure of 600V IC and A New Voltage Sensing Device", by T. Terashima et al., IEEE 1993, Dec. 1993.
Mitsubishi Denki & Kabushiki Kaisha
Prenty Mark V.
LandOfFree
High withstand voltage semiconductor device and manufacturing me does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High withstand voltage semiconductor device and manufacturing me, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High withstand voltage semiconductor device and manufacturing me will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1284251