High withstand-voltage semiconductor device

Details High withstand-voltage semiconductor device High withstand-voltage semiconductor device

2004-05-03

2009-10-13

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S342000, C257S343000, C257S500000

Reexamination Certificate

active

07602018

ABSTRACT:
A high withstand-voltage semiconductor device has a gate electrode in a semiconductor layer of one conductivity type, a drain diffusion layer and a source diffusion layer, a thick gate insulating layer between the drain diffusion layer and the gate electrode, and a low-concentration offset diffusion layer of the opposite conductivity type in a region including the drain diffusion layer. A buried layer of the one conductivity type, which has a higher concentration than the semiconductor layer, is provided directly under the gate electrode at approximately the same depth as the depth of the offset diffusion layer. The buried layer disperses field concentration at the drain junction to thereby ensure a higher withstand voltage.

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Chinese Office Action dated Jun. 9, 2006 with English translation.

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