High withstand voltage M I S field effect transistor and semicon

Details High withstand voltage M I S field effect transistor and semicon High withstand voltage M I S field effect transistor and semicon

1994-10-07

1995-07-11

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257337, 257343, 257401, 257409, H01L 2910, H01L 2978

Patent

active

054323703

ABSTRACT:
A semiconductor integrated circuit device is provided in which a highly reliable and low cost intelligent power semiconductor is mounted on the same substrate as that of a control circuit having a logic element, such as a low withstand voltage CMOS etc., and high withstand voltage and high current output MIS field effect transistor. A high withstand voltage MOSFET is composed of a vertical MOS portion 25 formed in one side of a laterally widened well layer 2 and a drain portion formed in the other side thereof and a second base layer 4 is formed on the surface of the well layer 2. Accordingly, a depletion layer widened just under the MOS portion 25 and the second base layer 4 develops a JFET effect at OFF time thereby realizing a high withstand voltage and reliability is provided since the generation of hot carriers can be prevented by the second base layer 4.

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