Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-26
2005-07-26
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06921941
ABSTRACT:
It is intended to provide a high withstand voltage field effect type semiconductor device that relaxes electric fields in a semiconductor substrate without thickening thickness of a drift region and achieves withstand-ability against high voltage without sacrificing ON-voltage, switch-OFF characteristics, and miniaturization. A field effective type semiconductor device comprises emitter regions100, 104and gate electrodes106and the like on a surface (upper surface in FIG.2), a collector region101and the like on the other surface (lower surface in FIG.2), wherein N−field dispersion regions111of low impurity concentration are arranged between P body regions103facing to gate electrodes106and an N drift region102below P body regions103. Thereby, electric field between collector and emitter is relaxed and high withstand voltage field effect type semiconductor device is realized. Another field dispersion region can be arranged between the N drift region102and P+collector region101below the N drift region102.
REFERENCES:
patent: 5751024 (1998-05-01), Takahashi
patent: 9-283754 (1997-10-01), None
Kawaji Sachiko
Kushida Tomoyoshi
Nishiwaki Katsuhiko
Finnegan Henderson Farabow Garrett & Dunner LLP
Flynn Nathan J.
Quinto Kevin
Toyota Jidosha & Kabushiki Kaisha
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