High-voltage vertical transistor with a varied width silicon...

Details High-voltage vertical transistor with a varied width silicon... High-voltage vertical transistor with a varied width silicon...

2011-06-21

2011-06-21

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S401000, C257S409000, C257SE29262

Reexamination Certificate

active

07964912

ABSTRACT:
In one embodiment, a vertical HVFET includes a pillar of semiconductor material a pillar of semiconductor material arranged in a loop layout having at least two substantially parallel and substantially linear fillet sections each having a first width, and at least two rounded sections, the rounded sections having a second width narrower than the first width, a source region of a first conductivity type being disposed at or near a top surface of the pillar, and a body region of a second conductivity type being disposed in the pillar beneath the source region. First and second dielectric regions are respectively disposed on opposite sides of the pillar, the first dielectric region being laterally surrounded by the pillar, and the second dielectric region laterally surrounding the pillar. First and second field plates are respectively disposed in the first and second dielectric regions.

REFERENCES:
patent: 7468536 (2008-12-01), Parthasarathy
patent: 7557406 (2009-07-01), Parthasarathy et al.
patent: 7786533 (2010-08-01), Disney
patent: 2007/0029597 (2007-02-01), Lee et al.
patent: 2008/0197418 (2008-08-01), Parthasarathy et al.

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