Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-08-30
2010-11-09
Mondt, Johannes P (Department: 3663)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S330000
Reexamination Certificate
active
07829944
ABSTRACT:
A high-voltage transistor with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions separated from field plate members by one or more dielectric layers. With the field plate members at the lowest circuit potential, the transistor supports high voltages applied to the drain in the off-state. The layered structure may be fabricated in a variety of orientations. A MOSFET structure may be incorporated into the device adjacent to the source region, or, alternatively, the MOSFET structure may be omitted to produce a high-voltage transistor structure having a stand-alone drift region.
REFERENCES:
patent: 4343015 (1982-08-01), Baliga et al.
patent: 4531173 (1985-07-01), Yamada
patent: 4618541 (1986-10-01), Forouhi et al.
patent: 4626789 (1986-12-01), Nakata et al.
patent: 4626879 (1986-12-01), Colak
patent: 4665426 (1987-05-01), Allen et al.
patent: 4738936 (1988-04-01), Rice
patent: 4754310 (1988-06-01), Coe
patent: 4764800 (1988-08-01), Sander
patent: 4796070 (1989-01-01), Black
patent: 4811075 (1989-03-01), Eklund
patent: 4890144 (1989-12-01), Teng et al.
patent: 4890146 (1989-12-01), Williams et al.
patent: 4922327 (1990-05-01), Mena et al.
patent: 4926074 (1990-05-01), Singer et al.
patent: 4926243 (1990-05-01), Nakagawa et al.
patent: 4929987 (1990-05-01), Einthoven
patent: 4939566 (1990-07-01), Singer et al.
patent: 4963951 (1990-10-01), Adler et al.
patent: 4967246 (1990-10-01), Tanaka
patent: 5010024 (1991-04-01), Allen et al.
patent: 5025296 (1991-06-01), Fullerton et al.
patent: 5040045 (1991-08-01), McArthur et al.
patent: 5068700 (1991-11-01), Yamaguchi et al.
patent: 5072266 (1991-12-01), Bulucea et al.
patent: 5122848 (1992-06-01), Lee et al.
patent: 5146298 (1992-09-01), Eklund
patent: 5155574 (1992-10-01), Yamaguchi
patent: 5237193 (1993-08-01), Williams et al.
patent: 5258636 (1993-11-01), Rumennik et al.
patent: 5270264 (1993-12-01), Andideh et al.
patent: 5294824 (1994-03-01), Okada
patent: 5306656 (1994-04-01), Williams et al.
patent: 5313082 (1994-05-01), Eklund
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5326711 (1994-07-01), Malhi
patent: 5349225 (1994-09-01), Redwine et al.
patent: 5359221 (1994-10-01), Miyamoto et al.
patent: 5386136 (1995-01-01), Williams et al.
patent: 5438215 (1995-08-01), Tihanyi
patent: 5473180 (1995-12-01), Ludikhuize
patent: 5514608 (1996-05-01), Williams et al.
patent: 5521105 (1996-05-01), Hsu et al.
patent: 5550405 (1996-08-01), Cheung et al.
patent: 5637898 (1997-06-01), Baliga
patent: 5648283 (1997-07-01), Tsang et al.
patent: 5654206 (1997-08-01), Merrill
patent: 5656543 (1997-08-01), Chung
patent: 5659201 (1997-08-01), Wollensen
patent: 5663599 (1997-09-01), Lur
patent: 5665994 (1997-09-01), Palara
patent: 5670828 (1997-09-01), Cheung et al.
patent: 5679608 (1997-10-01), Cheung et al.
patent: 5716887 (1998-02-01), Kim
patent: 5760440 (1998-06-01), Kitamura et al.
patent: 5821144 (1998-10-01), D'Anna et al.
patent: 5869875 (1999-02-01), Herbert
patent: 5917216 (1999-06-01), Floyd et al.
patent: 5929481 (1999-07-01), Hshieh et al.
patent: 5943595 (1999-08-01), Akiyama et al.
patent: 5969408 (1999-10-01), Perelli
patent: 5973360 (1999-10-01), Tihanyi
patent: 5998833 (1999-12-01), Baliga
patent: 6010926 (2000-01-01), Rho et al.
patent: 6049108 (2000-04-01), Williams et al.
patent: 6054752 (2000-04-01), Hara et al.
patent: 6084277 (2000-07-01), Disney
patent: 6127703 (2000-10-01), Letavic et al.
patent: 6133607 (2000-10-01), Funaki et al.
patent: 6184555 (2001-02-01), Tihanyi et al.
patent: 6191447 (2001-02-01), Baliga
patent: 6194283 (2001-02-01), Gardner et al.
patent: 6207994 (2001-03-01), Rumennik et al.
patent: 6294818 (2001-09-01), Fujihira
patent: 6316807 (2001-11-01), Fujishima et al.
patent: 6353252 (2002-03-01), Yasuhara et al.
patent: 6359308 (2002-03-01), Hijzen et al.
patent: 6362064 (2002-03-01), McGregor et al.
patent: 6365932 (2002-04-01), Kouno et al.
patent: 6388286 (2002-05-01), Baliga
patent: 6462377 (2002-10-01), Hurky et al.
patent: 6468847 (2002-10-01), Disney
patent: 6509220 (2003-01-01), Disney
patent: 6525372 (2003-02-01), Baliga
patent: 6555873 (2003-04-01), Disney et al.
patent: 6573558 (2003-06-01), Disney
patent: 6635544 (2003-10-01), Disney
patent: 6667213 (2003-12-01), Disney
patent: 6677641 (2004-01-01), Kocon
patent: 6683346 (2004-01-01), Zeng
patent: 6734714 (2004-05-01), Disney
patent: 6764889 (2004-07-01), Baliga
patent: 6781194 (2004-08-01), Baliga
patent: 6781198 (2004-08-01), Disney
patent: 6787847 (2004-09-01), Disney
patent: 6787848 (2004-09-01), Ono et al.
patent: 6809354 (2004-10-01), Okada et al.
patent: 6825536 (2004-11-01), Disney
patent: 6838346 (2005-01-01), Disney
patent: 6865093 (2005-03-01), Disney
patent: 6882005 (2005-04-01), Disney
patent: 6987299 (2006-01-01), Disney
patent: 7115958 (2006-10-01), Disney et al.
patent: 7135748 (2006-11-01), Balakrishnan
patent: 2001/0015459 (2001-08-01), Watanabe et al.
patent: 2002/0056884 (2002-05-01), Baliga
patent: 2002/0175351 (2002-11-01), Baliga
patent: 2003/0209757 (2003-11-01), Henniger et al.
patent: 1469487 (2004-01-01), None
patent: 43 09 764 (1994-09-01), None
patent: 1073 123 (2000-07-01), None
patent: 2 309 336 (1997-01-01), None
patent: 52-178218 (1978-01-01), None
patent: 56-38867 (1981-04-01), None
patent: 57-10975 (1982-01-01), None
patent: 57-12557 (1982-01-01), None
patent: 57-12558 (1982-01-01), None
patent: 60-64471 (1985-04-01), None
patent: 1-238037 (1989-09-01), None
patent: 3-211771 (1991-09-01), None
patent: 4107877 (1992-04-01), None
patent: 6-120510 (1994-04-01), None
patent: 6-196630 (1994-06-01), None
patent: 6-224426 (1994-08-01), None
patent: 9-266311 (1997-10-01), None
patent: 2000-12854 (2000-01-01), None
patent: 2002-43562 (2002-02-01), None
patent: WO 97/35346 (1997-09-01), None
patent: WO 99/34449 (1999-07-01), None
patent: WO 00/33385 (2000-06-01), None
patent: WO 02/41402 (2002-05-01), None
patent: WO 02/099909 (2002-12-01), None
Merriam-Webster'sCollegiate Dictionary, tenth Edition, p. 1259, Merriam-Webster, Inc., Springfield. MA (USA), 1999.
S. Wolf, “Silicon Processing for the VLSI Era”, vol. 3—“The submicron MOSFET”, pp. 136-137, Lattice Press, Sunset Beach, CA (USA), 1995.
“High Voltage Thin Layer Devices (RESURF Devices),” Appels and Vaes, IEDM Tech Digest, Dec. 3-4-5, 1979, pp. 238-241.
“Realization of High Breakdown Voltage (>700V) in Thin SOI Devices,” S. Merchan, et al., Phillips Laboratories North America, 1991 IEEE, pp. 31-35.
Patent Abstract of Japan, Kawasaki, et al., vol. 16, No. 347(E-1240), JP04-107867, Jul. 27, 1992.
“Theory of Semiconductor Superjunction Devices,” Fujihira, Japan Journal of Applied Physics vol. 36, Oct. 1997, pp. 6254-6262.
“Air-Gap Formation During IMD Deposition to Lower Interconnect Capacitance,” Shieh, et al., IEEE Electron Device Letters vol. 17 No. 1, Jan. 1998.
“Comparison of High-Voltage Devices for Power Integrated Circuits,” Jayaraman, et al., IEDM 84, pp. 258-261.
“A New Generation of High-Voltage MOSFETs Breaks the Limit Line of Silicon,” Deb, et al. Siemens AG, Munchen, Germany, IEDM 98-683-IEDM 98-685.
“High Performance 600V Smart Power Technology Based on Thin Layer Silicon-on-Insulators,” Letavic, et al, Phillips Research, 4 pages.
“Modern Semiconductor Device Physics,” Sze, et al., John Wiley & Sons, Chapter 4 (“Power Devices”), 1998, pp. 203-206.
“Modeling and Optimisations of Lateral High Voltage IC Devices to Minimize 3-D Effects,” Hamza Yilmaz, R&D Engineering, General Electric Co., NC, pp. 290-294.
“Optimization of the Specific On-Resistance of the COOLMOS™,” Chen, et al., IEEE Transactions on Electron Devices, vol. 48, No. 2, Feb. 1, pp. 344-348.
“Lateral Unbalanced Super Junction (USJ) / 3D-RESURF for High Breakdown Voltage on SOI,” Ng, et al., Apr. 6, 20
Mondt Johannes P
Power Integrations, Inc.
The Law Offices of Bradley J. Bereznak
LandOfFree
High-voltage vertical transistor with a multi-layered... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-voltage vertical transistor with a multi-layered..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-voltage vertical transistor with a multi-layered... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4164532