Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-26
2011-07-26
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S173000, C257S360000, C257S343000
Reexamination Certificate
active
07986010
ABSTRACT:
Formation of an electrostatic discharge (ESD) protection device having a desired breakdown voltage (BV) is disclosed. The breakdown voltage (BV) of the device can be set, at least in part, by varying the degree to which a surface junction between two doped areas is covered. This junction can be covered in one embodiment by a dielectric material and/or a semiconductor material. Moreover, a variable breakdown voltage can be established by concurrently forming, in a single process flow, multiple diodes that have different breakdown voltages, where the diodes are also formed concurrently with circuitry that is to be protected. To generate the variable or different breakdown voltages, respective edges of isolation regions can be extended to cover more of the surface junctions of different diodes. In this manner, a first diode can have a first breakdown voltage (BV1), a second diode can have a second breakdown voltage (BV2), a third diode can have a third breakdown voltage (BV3), etc. This can provide substantial efficiency and cost savings where there may be varying ESD requirements.
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Mollat Martin B.
Phan Tony Thanh
Brady III Wade J.
Franz Warren L.
Le Dung A.
Telecky Jr Frederick J.
Texas Instruments Incorporated
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