Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-03
2005-05-03
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000, C257S412000, C257S414000, C257S655000, C257S666000, C257S668000, C257S669000
Reexamination Certificate
active
06888207
ABSTRACT:
High voltage transistors with high breakdown voltages are provided. These high voltage transistors are formed with graded drain extension regions. The concentration of charge carriers increases farther away from the gate across each drain extension region, causing severe electric fields to be moved away from the gate. Methods and structures of the present invention may be used to increase a transistor's breakdown voltage to the theoretical limit of the device. High voltage transistors with graded extension regions may be p-channel or n-channel MOSFETs.
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Cahill Steven J.
Linear Technology Corporation
Townsend and Townsend / and Crew LLP
Wojciechowicz Edward
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