High voltage transistor having reduced on-resistance

Details High voltage transistor having reduced on-resistance High voltage transistor having reduced on-resistance

1992-07-31

1994-03-15

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, 257339, 257342, 257343, H01L 2982, H01L 2976, H01L 2994, H01L 31062

Patent

active

052948242

ABSTRACT:
A method for forming a plurality of surface conduction paths (33) in a conductive region (16) of a first conductivity type. A plurality of areas (17) of a second conductivity type are formed in the conductive region (16). The plurality of areas (17) deplete the conductive region (16) when a reverse bias voltage is placed across the conductive region (16) and the plurality of areas (17). Area of the conductive region (16) adjacent to each of the plurality of areas (17) form the plurality of surface conduction paths (33) for conducting current through the conductive region (16).

REFERENCES:
patent: 4300150 (1981-11-01), Colak
patent: 4626879 (1986-12-01), Colak
patent: 4811075 (1989-03-01), Eklund
patent: 5023678 (1991-06-01), Kinzer

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