High voltage transistor and method of manufacturing the same

Details High voltage transistor and method of manufacturing the same High voltage transistor and method of manufacturing the same

2006-04-25

2006-04-25

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S752000, C438S306000, C438S637000

Reexamination Certificate

active

07034360

ABSTRACT:
Provided is a high voltage transistor in a flash memory device comprising: a source/drain junction of a DDD structure consisting of a high-concentration impurity region and a low-concentration impurity region surrounding the high-concentration impurity region, the high-concentration impurity region being formed in parallel with a gate electrode at a distance spaced by a location in which a contact hole is formed, and having a rectangular shape whose width is the same as or wider than that of the contact hole and whose length is the same as or narrower than that of an active region through which the gate electrode passes. Accordingly, a current density to pass the gate electrode neighboring the contact hole portion and a current density to pass the gate electrode at a portion where the contact hole cannot be formed become uniform. A uniform and constant saturation current can be obtained regardless of the number of the contact hole.

REFERENCES:
patent: 5519239 (1996-05-01), Chu
patent: 2002/0016081 (2002-02-01), Aloni et al.
patent: 2003/0042552 (2003-03-01), Chae
patent: 1020000006396 (2000-01-01), None

Affiliated with

Also associated with

Rating

High voltage transistor and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage transistor and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage transistor and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3618348