High voltage transistor

Details High voltage transistor High voltage transistor

1993-02-01

1993-12-28

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257367, 257401, 257409, H01L 2968, H01L 2910, H01L 2701, H01L 2940

Patent

active

052742598

ABSTRACT:
In a method for constructing a semiconducting device, within a substrate of a first conductivity type there is formed a well of second conductivity type. Within the well, an extended drain region of a first conductivity type is formed. An insulating region over the extended drain region is formed. A gate region is formed on a surface of the substrate. A first side of the gate region is adjacent to a first end of the extended drain region. A drain region of the first conductivity type is formed. The drain region is in contact with a second end of the extended drain region. A source region is formed on a second side of the gate region.

REFERENCES:
Vladimir Rumennik, David L. Heald, Integrated High and Low Voltage CMOS Technology, IEEE 28th Int. Electron Devices Meeting, pp. 77-80, 1982.

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