High voltage tolerant thin film transistor

Details High voltage tolerant thin film transistor High voltage tolerant thin film transistor

1998-05-08

2000-07-25

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438238, 438396, H01L 2100, H01L 2120

Patent

active

060935855

ABSTRACT:
High voltage tolerant thin film transistors (TFTs) may be formed during a dual work function polysilicon process used to fabricate poly--poly capacitors with substantially no additional process complexity. Polysilicon lower plate material is patterned in those areas targeted for TFT formation into source, drain, and channel regions. In one embodiment, TFT source and drain regions are doped to the same conductivity as capacitor lower plate regions while TFT channel regions are not doped. In another embodiment, TFT channel regions are lightly doped with positively charged ions. Capacitor dielectric material is used to form TFT gate structures. Capacitor top plate silicon provides TFT gate connection surfaces.

REFERENCES:
patent: 4181537 (1980-01-01), Ichinohe
patent: 4240092 (1980-12-01), Kuo
patent: 4350536 (1982-09-01), Nakano et al.
patent: 4391032 (1983-07-01), Schulte
patent: 4411058 (1983-10-01), Chen
patent: 4442591 (1984-04-01), Haken
patent: 4466177 (1984-08-01), Chao
patent: 4472871 (1984-09-01), Green et al.
patent: 4527180 (1985-07-01), Oto
patent: 4558508 (1985-12-01), Kinney et al.
patent: 4590663 (1986-05-01), Haken
patent: 4613883 (1986-09-01), Tihanyi
patent: 4613885 (1986-09-01), Haken
patent: 4622570 (1986-11-01), Taguchi
patent: 4626450 (1986-12-01), Tani et al.
patent: 4639274 (1987-01-01), Krishna
patent: 4677739 (1987-07-01), Doering et al.
patent: 4697332 (1987-10-01), Joy et al.
patent: 4717683 (1988-01-01), Parrillo et al.
patent: 4735915 (1988-04-01), Kita et al.
patent: 4819052 (1989-04-01), Hutter
patent: 4826779 (1989-05-01), Wright et al.
patent: 4866002 (1989-09-01), Shizukuishi et al.
patent: 4889825 (1989-12-01), Parrillo
patent: 4896243 (1990-01-01), Chatterjee et al.
patent: 4929565 (1990-05-01), Parrillo
patent: 5014105 (1991-05-01), Hata et al.
patent: 5024960 (1991-06-01), Haken
patent: 5037772 (1991-08-01), McDonald
patent: 5047358 (1991-09-01), Kosiak et al.
patent: 5097310 (1992-03-01), Eimori et al.
patent: 5145799 (1992-09-01), Rodder
patent: 5182225 (1993-01-01), Matthews
patent: 5252510 (1993-10-01), Lee et al.
patent: 5254487 (1993-10-01), Tamagawa
patent: 5285995 (1994-02-01), Malhi
patent: 5382820 (1995-01-01), Yang et al.
patent: 5413944 (1995-05-01), Lee
patent: 5416038 (1995-05-01), Hsue et al.
patent: 5432114 (1995-07-01), O
patent: 5438005 (1995-08-01), Jang
patent: 5449637 (1995-09-01), Saito et al.
patent: 5468666 (1995-11-01), Chapman
patent: 5472887 (1995-12-01), Hutter et al.
patent: 5473183 (1995-12-01), Yonemoto
patent: 5495122 (1996-02-01), Tada
patent: 5497021 (1996-03-01), Tada
patent: 5506438 (1996-04-01), Hsue et al.
patent: 5517046 (1996-05-01), Hsing et al.
patent: 5527722 (1996-06-01), Hutter et al.
patent: 5536672 (1996-07-01), Miller et al.
patent: 5541123 (1996-07-01), Williams et al.
patent: 5541125 (1996-07-01), Williams et al.
patent: 5541435 (1996-07-01), Beasom
patent: 5545577 (1996-08-01), Tada
patent: 5547880 (1996-08-01), Williams et al.
patent: 5548147 (1996-08-01), Mei
patent: 5559044 (1996-09-01), Williams et al.
patent: 5573963 (1996-11-01), Sung
patent: 5576570 (1996-11-01), Ohsawa et al.
patent: 5578855 (1996-11-01), Gaffur et al.
patent: 5583061 (1996-12-01), Williams et al.
patent: 5585660 (1996-12-01), Mei
patent: 5618743 (1997-04-01), Williams et al.
patent: 5622885 (1997-04-01), Merrill et al.
patent: 5650341 (1997-07-01), Yang et al.
patent: 5663086 (1997-09-01), Restoker et al.
patent: 5739572 (1998-04-01), Noguchi
patent: 5759887 (1998-06-01), Ito et al.
patent: 5780351 (1998-07-01), Arita et al.
patent: 5804488 (1998-09-01), Shih et al.
patent: 5858852 (1999-01-01), Aiso et al.
patent: 5909624 (1999-06-01), Yeager et al.
patent: 5923970 (1999-07-01), Kirlin
patent: 5930627 (1999-07-01), Zhou et al.

Affiliated with

Also associated with

Rating

High voltage tolerant thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage tolerant thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage tolerant thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1335710