High voltage tolerant receivers

Electronic digital logic circuitry – Interface – Supply voltage level shifting

Reexamination Certificate

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Details

C326S083000, C326S057000

Reexamination Certificate

active

06362653

ABSTRACT:

TECHNICAL FIELD
The present invention relates, in general, to receivers and, in particular, to receivers that can accommodate receiver input signals that exceed the power supply voltages of the integrated circuits that are included in the receivers.
BACKGROUND OF THE INVENTION
As the core voltages of receivers (i.e., the optimum voltage at which the receiver circuits run) are reduced, input signals that are greater than the core voltages must be accommodated. Typically, interface circuits are included in the receiver that permit receiving input signals that are greater than the core voltages.
A conventional receiver that is “high voltage tolerant,” such as the one shown in
FIG. 1
, includes an NFET pass-gate at the input to protect the receiver input stage, which is typically a CMOS inverter, from voltage levels at the gate of the input inverter that are higher than the input stage supply voltage. The NFET pass-gate at the PAD input serves to protect against the voltage level at the gate of the input stage of the receiver from rising to higher than approximately a threshold voltage below the input stage supply voltage VDDIN.
Because the NFET pass-gate protects against the voltage level at the gate of the input stage of the receiver from rising to higher than approximately a threshold voltage below the input stage supply voltage, a device, commonly called a “keeper” device is included. This keeper device, typically a PFET, is used to pull the input to a full input supply voltage level when there is a logical “1” at the PAD input. The PFET keeper device shuts PFET
12
off completely when a logical “1” on the input will turn on an input stage NFET, thereby providing a “0” to the gate of PFET
16
turning it on. If the input device PFET
12
is not completely off, there will be a current leakage path directly from the input reference voltage to ground. The PFET keeper device has a source that is tied to the input supply voltage, a drain that is tied to the input stage inverter gate, and a gate that is tied to and controlled by the output of the input stage inverter.
Although the combination of the input NFET pass-gate and the PFET keeper device solve the problems of high voltage protection and turn off the input PFET, the keeper device presents another problem. When the input is switching from a logical “1” to a logical “0” or from a logical “0” to a logical “1”, there is a voltage range within which the PFET keeper device is turned on completely or partially at the same time that the input source pull down device is also on. This creates an input transient current spike that must be overcome by the input source in order to switch the input of the receiver. This makes difficult the use of passive pull down devices, such as resistors, to pull the input of the receiver low when the receiver is not being driven by an active device. If a pull down resistor is used, the value of the pull down resistor must be low enough to supply the current required to switch the receiver input stage and shut the keeper device off. Using a small pull down resistor can, in turn, result in power dissipation problems.
NFET pass-gate
10
serves to protect the receiver input inverter gate of the receiver input stage composed of a PFET
12
and an NFET
14
from high voltages by dropping high input voltages at input node PAD to approximately a threshold voltage below the VDDIN input stage supply voltage. As indicated above, a threshold voltage drop is produced by a voltage drop occurring at an interface in a structure acting as a pass-gate.
Because the NFET pass-gate
10
protects against the voltage level at the gate of the input stage of the receiver from rising to higher than approximately a threshold voltage below the input stage supply voltage, a “keeper” device, namely a PFET
16
, is used to pull the input to a full VDDIN input stage supply voltage level when there is a logical “1” at the input node PAD, with the PFET keeper device
16
shutting off PFET
12
completely because the logical “1” on the input node PAD will turn on the input stage NFET
14
. Keeper device
16
will ensure that PFET
12
is completely shut off when NFET
14
and an NFET
18
are turned on when there is a logical “1” at input node PAD. NFET
18
is a receiver enable device that disables the receiver when activated by an enable source EN.
PFET
20
sets the receiver to a known state when activated by the enable source EN when the receiver is disable by NFET
18
. PFET
20
serves to guarantee a known logical output level “0” at output node Z of a receiver output stage connected to the output of the receiver input inverter stage when the receiver is disabled. The receiver output stage is an inverter composed of a PFET
22
and an NFET
24
. The VDD output stage supply voltage is the native voltage of the integrated circuit with which the receiver output Z must be compatible.
As set forth above, the pass-gate
10
and the keeper device
16
protect the receiver input stage from high voltages and ensure that there is not a leakage path in the receiver when a logical “1” is applied to input node PAD. However, the keeper device
16
presents another problem that must be considered for practical applications. When the voltage at input node PAD is being switched from a logical “1” to a logical “0” or vice versa, there is a time when the keeper device
16
, is fully on or partially on at the same time as the pull down device driving input node PAD. This results in a current proportional to the size of the keeper device
16
that must be overcome by the device driving the input node PAD. Also, external pull down resistors or devices are sometimes required in system applications. Pull down devices will act against or offset the current of the keeper device which, in turn, will hinder the ability of the pull down device to keep a logical “0” at input node PAD. To overcome the keeper device
16
, pull down devices are oversized to function reliably, which results in power consumption both on and off the integrated circuit.
By way of example, a 5 volt drop at input node PAD (i.e., a switching from a logical “0” to a logical “1”) is reduced to 2.7 volts by NFET pass-gate
10
for a VDDIN of 3.3 volts. The 2.7 volts logical “1” at the drain of NFET pass-gate
10
is enough to turn NFET
14
on and the logical “0” at the junction of NFET
14
and PFET
12
turns PFET
16
on, so that the drain of NFET pass-gate
10
is drawn to the 3.3 volt VDDIN supply voltage as PFET
16
is turned on. The 3.3 volts at the drain of NFET pass-gate
10
turn PFET
12
off maintaining the logical “0” at the junction of NFET
14
and PFET
12
.
The deficiencies of the prior art show that a need still exists for improvement.
It is an objective of the present invention to provide a new and improved high voltage tolerant receiver.
It is another objective of the present invention to provide new and improved high voltage tolerant receivers that are not subject to the shortcomings and limitations of prior art high voltage tolerant receivers that have been described above.
SUMMARY OF THE INVENTION
A high voltage tolerant receiver, constructed in accordance with the present invention, includes an input stage supply voltage source, an output stage supply voltage source, a receiver input, and a receiver output. Also included in this high voltage tolerant receiver are a receiver input stage and an NFET pass-gate having a source connected to the receiver input, a gate connected to the input stage supply voltage source, and a drain connected to the receiver input stage. A high voltage tolerant receiver, constructed in accordance with the present invention, also includes a semiconductor device having a source connected to the input stage supply voltage source, a drain connected to the receiver input stage, and a gate connected to the input stage supply voltage source. A high voltage tolerant receiver, constructed in accordance with the present invention, further includes a receiver output stage connected to the output stage supply voltage source and between the receiv

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