Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-12
2011-07-12
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C326S085000, C327S108000, C257SE21090, C257SE29345
Reexamination Certificate
active
07977721
ABSTRACT:
A method for increasing a voltage tolerance of a MOS device having a first capacitance value associated therewith is provided. The method includes the steps of: connecting at least a first capacitor in series with the MOS device, the first capacitor having a first capacitance value associated therewith, the first capacitor having a first terminal coupled to a gate of the MOS device and a second terminal adapted to receive a first signal; and adjusting a ratio of the first capacitance value and a second capacitance value associated with the MOS device such that a second signal present at the gate of the MOS device will be an attenuated version of the first signal. An amount of attenuation of the first signal is a function of the ratio of the first and second capacitance values.
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Agere Systems Inc.
Ryan & Mason & Lewis, LLP
Sefer A.
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