High-voltage thin-film transistor with sub-gate elements

Details High-voltage thin-film transistor with sub-gate elements High-voltage thin-film transistor with sub-gate elements

1999-02-17

2000-10-17

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

347250, 347331, 347346, 347365, 347366, H01L 2900

Patent

active

061336092

ABSTRACT:
Disclosed is a thin-film transistor which can be operated even if a high voltage is applied thereto. The thin-film transistor consists of a first and a second thin-film transistor. Each thin-film transistor has an offset region between an active region and a drain region whose conductivity is controlled by a sub-gate electrode. Each thin-film transistor has a sub-gate insulator between a sub-gate electrode and the offset region which is thicker than a main-gate insulator between the main-gate electrode and the active region. The thickness of the main-gate insulator of the second thin-film transistor is thicker than the thickness of the main-gate insulator of the first thin-film transistor.

REFERENCES:
patent: 5475238 (1995-12-01), Hamada
T. Huang et al., "A Simpler 100-V Polysilicon TFT with Improved Turn -On Characteristics", IEEE Electron Devices Letters, vol. 11, No. 6, Jun. 1990, pp. 244-246 with English Abstract.

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