High voltage thin film transistor having a linear doping profile

Details High voltage thin film transistor having a linear doping profile High voltage thin film transistor having a linear doping profile

1995-05-23

1998-06-16

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257409, H01L 2701, H01L 2976, H01L 2994

Patent

active

057675473

ABSTRACT:
The present invention is directed to a thin film transistor having a linear doping profile between the gate and drain regions. This is constructed in a particular manner in order to achieve a thin film transistor having a significantly high breakdown voltage of the order of 700 to 900 volts, much greater than that achieved in the prior art.

REFERENCES:
patent: 5113236 (1992-05-01), Arnold et al.
patent: 5132753 (1992-07-01), Chang et al.

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