Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2006-06-30
2009-06-09
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C327S051000, C327S052000, C327S053000, C327S054000, C327S055000, C327S056000, C327S057000, C327S333000, C327S535000, C327S536000, C327S589000, C327S534000, C327S537000
Reexamination Certificate
active
07545685
ABSTRACT:
A high-voltage switch circuit includes an enable control circuit, a feedback circuit, a boosting circuit, and a high voltage switch. The enable control circuit precharges an output node to a set voltage in response to an enable signal. The feedback circuit supplies a feedback voltage to an input node in response to a switch control voltage generated from the output node when the output node is precharged. The boosting circuit boosts the feedback voltage and outputs a boosting voltage to the output node, in response to clock signals, thereby increasing the switch control voltage. The high voltage switch is turned on or off in response to the switch control voltage, and is turned on to receive a high voltage and output the received high voltage. The boosting circuit includes an amplification circuit of a cross-coupled type.
REFERENCES:
patent: 7233193 (2007-06-01), Kim
patent: 7282956 (2007-10-01), Lee
patent: 2003-196980 (2003-07-01), None
patent: 1999-0057346 (1999-07-01), None
patent: 1020020016320 (2002-03-01), None
Hynix / Semiconductor Inc.
Nguyen Van-Thu
Townsend and Towndsend and Crew LLP
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