High voltage structures with oxide isolated source and RESURF dr

Details High voltage structures with oxide isolated source and RESURF dr High voltage structures with oxide isolated source and RESURF dr

1993-04-26

1994-08-16

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

257339, 257343, 257347, 257629, 257630, H01L 2701, H01L 2723, H01L 2968, H01L 2978

Patent

active

053389654

ABSTRACT:
An integrated circuit RESURF LDMOS power transistor combines SOI MOS technology with RESURF LDMOS technology to provide a source isolated high voltage power transistor with low "on" resistance for use in applications requiring electrical isolation between the source and substrate.

REFERENCES:
patent: 4763183 (1988-08-01), Ng et al.
patent: 4786952 (1988-11-01), MacIver et al.
patent: 5113236 (1992-05-01), Arnold et al.
J. A. Appels et al., "High voltage thin layer devices (Resurf Devices)" IEDM Tech. Digest (Dec. 1979) pp. 238-242.
H. W. Lam, "Silicon-On-Insulator-Epitaxy" in: Epitaxial Silicon Technology, New York, Academic Press (1986) pp. 269-321.
Ratnham, et al., "High Voltage Silicon-on-Insulator (SOI) MOSFETs", 3rd International Symposium on Power Semiconductor Devices and ICs, pp. 36-39, 1991.

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