High voltage split gate CMOS transistors built in standard 2-pol

Details High voltage split gate CMOS transistors built in standard 2-pol High voltage split gate CMOS transistors built in standard 2-pol

1998-03-18

2000-09-12

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257355, H01L 2978

Patent

active

061181579

ABSTRACT:
A split-gate MOS transistor includes two separate but partially overlapping gates to reduce the electric field near the drain-channel interface region and, thereby, has an increased gated-diode breakdown voltage.

REFERENCES:
patent: 5012315 (1991-04-01), Shur
patent: 5100819 (1992-03-01), Gill et al.
patent: 5373183 (1994-12-01), Beasom
patent: 5528056 (1996-06-01), Shimada et al.
patent: 5608243 (1997-03-01), Chi et al.
patent: 5796139 (1998-08-01), Fukase

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