High-voltage SOI thin-film transistor

Details High-voltage SOI thin-film transistor High-voltage SOI thin-film transistor

1999-08-16

2000-12-26

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257488, 257489, 257490, H01H 2976

Patent

active

061664189

ABSTRACT:
A high-voltage SOI thin-film transistor includes a semiconductor thin film of a first conductivity type which is embedded in an insulator layer disposed on a semiconductor body. The semiconductor thin film includes a drain zone and a source zone, both having a second conductivity type opposite the first conductivity type. A gate electrode is also provided in the insulator layer. Field plates are disposed obliquely in the insulator layer between the gate electrode and the drain zone, in such a way that their spacing from the semiconductor thin film increases with increasing distance from the gate electrode. Highly doped zones of the second conductivity type in the semiconductor thin film are associated with the field plates, so that when a space charge zone is propagating from the source zone, a voltage at the various field plates stops changing and remains the same.

REFERENCES:
patent: 5422505 (1995-06-01), Shirai
patent: 5438220 (1995-08-01), Nakagawa et al.
patent: 5648671 (1997-07-01), Merchant
patent: 5969387 (1999-10-01), Letavic et al.
Neilson et al., "Double Field Shield Structure", RCA Tech. Notes, TN No.: 1325, May 1983.
Published International Application No. 97/22149 (Merchant), dated Jun. 19, 1997.
Published International Application No. 96/29744, dated Sep. 26, 1996.
"Integrateded Power Devices", J. Tihanyi, Siemens AG, Components Division, Munich, Germany, 1982, pp. 6-10.

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