High voltage SOI semiconductor device

Details High voltage SOI semiconductor device High voltage SOI semiconductor device

2005-03-09

2010-06-08

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29273, C257S348000, C257S349000, C257S350000, C257S506000

Reissue Patent

active

RE041368

ABSTRACT:
In an SOI (Silicon On Insulator) semiconductor device, a first semiconductor layer overlies a semiconductor substrate so as to sandwich an insulating layer, and second and third semiconductor layers with a different conductivity type from the second semiconductor layer are formed on the surface of the first semiconductor layer. At the interface between the first semiconductor layer and the insulating layer, a fourth semiconductor layer with a different conductivity type from the first semiconductor layer is formed. The fourth semiconductor layer includes an impurity of larger than 3×1012/cm2so as not to be completely depleted even though a reverse bias voltage is applied between the second and third semiconductor layers.

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