High voltage silicon diode with optimum placement of silicon-ger

Details High voltage silicon diode with optimum placement of silicon-ger High voltage silicon diode with optimum placement of silicon-ger

1995-12-20

1997-06-17

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Mesa structure

257623, 257590, 257593, H01L 2906, H01L 27082

Patent

active

056400438

ABSTRACT:
A high voltage silicon rectifier includes a substrate portion and an epitaxial mesa portion that is a frustrum of a pyramid with a substantially square cross section and side walls that make a forty five degree angle with the substrate portion. The mesa portion includes three germanium doped layers that introduce strain to speed up recombination of charge carriers. The topography of the base region of the rectifier has a high-low junction that includes a central portion that is deeper in the mesa than the germanium-doped layers and an edge portion that is shallower in the mesa than the germanium-doped layers and forms a positive bevel angle with the tapered side walls of the mesa,

REFERENCES:
patent: 3832246 (1974-08-01), Lynch
patent: 4255757 (1981-03-01), Hikin
patent: 4740477 (1988-04-01), Einthoven et al.
patent: 5010023 (1991-04-01), Einthoven
patent: 5097308 (1992-03-01), Salih
patent: 5102810 (1992-04-01), Salih
patent: 5298457 (1994-03-01), Einthoven et al.
patent: 5342805 (1994-08-01), Chan

Affiliated with

Also associated with

Rating

High voltage silicon diode with optimum placement of silicon-ger does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage silicon diode with optimum placement of silicon-ger, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage silicon diode with optimum placement of silicon-ger will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2160103