High-voltage sensor for integrated circuits

Details High-voltage sensor for integrated circuits High-voltage sensor for integrated circuits

1993-10-26

1995-03-14

Heyman, John S.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific signal discriminating without subsequent control

By amplitude

330288, 365228, 327 75, H03F 3193, G11C 700

Patent

active

053979460

ABSTRACT:
The CMOS high-voltage sensor circuit has a voltage reference including, for example, of four N-channel MOS transistors; one pass-gate P-channel transistor; one current-mirror P-channel MOS transistor; and a conventional high-voltage sensor including, for example, of two P-channel MOS transistors and one N-channel MOS transistor. The sensor circuit of this invention generates a high-voltage signal at the output if the input voltage is greater than both the reference voltage plus two P-channel threshold voltages and the supply voltage Vcc plus two P-channel threshold voltages. The power-up or power-down sequence may be in any order without adversely affecting the operation of the circuit of this invention.

REFERENCES:
patent: 4321489 (1982-03-01), Higuchi et al.
patent: 4471292 (1984-09-01), Schenck et al.
patent: 4594518 (1986-06-01), Pollachek
patent: 4658156 (1987-04-01), Hashimoto
patent: 4659944 (1987-04-01), Miller, Sr. et al.
patent: 4812680 (1989-03-01), Kawashima et al.
patent: 5280198 (1984-01-01), Almulla

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