High voltage semiconductor structure

Details High voltage semiconductor structure High voltage semiconductor structure

1998-07-02

2000-05-23

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257927, H01L 2978

Patent

active

060668784

ABSTRACT:
A high voltage MOSFET with low on-resistance and a method of lowering the on-resistance for a specific device breakdown voltage of a high voltage MOSFET. The MOSFET includes a blocking layer of a first conductivity type having vertical sections of a second conductivity type or the blocking layer may include alternating vertical sections of a first and second conductivity type.

REFERENCES:
patent: 4003072 (1977-01-01), Matsushita et al.
patent: 5200632 (1993-04-01), Sakurai
patent: 5218226 (1993-06-01), Slatter et al.
patent: 5438215 (1995-08-01), Tihanyi
patent: 5519245 (1996-05-01), Tokura et al.
patent: 5569941 (1996-10-01), Takahashi
patent: 5723349 (1998-03-01), Fallica
patent: 5838027 (1998-11-01), Kim et al.

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