High voltage semiconductor power device

Details High voltage semiconductor power device High voltage semiconductor power device

1998-03-13

2000-04-25

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

With physical configuration of semiconductor surface to...

257618, 257619, 257487, H01L 2358, H01L 2906

Patent

active

060547480

ABSTRACT:
A semiconductor power device includes a high-resistance semiconductor substrate of the first conductivity type having first and second major surfaces and a recess in either one of the first and second major surfaces, and a semiconductor power element with a field relaxation structure, at least part of which is formed in a region of the semiconductor substrate where the recess is formed.

REFERENCES:
patent: 3370209 (1968-02-01), Davis et al.
patent: 4374389 (1983-02-01), Temple
patent: 4927772 (1990-05-01), Arthur et al.
M. Kitagawa, et al., "High Voltage (4KV) Emitter Short Type Diode (ESD)", Proc. ISPSD 1992, pp. 60-65.
T. Matsushita, et al., "Highly Reliable High-Voltage Transistors by Use of the SIPOS Process", IEEE Transactions on Electron Devices, vol. ED-23, No. 8, Aug. 1976.

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