High voltage semiconductor devices with Schottky diodes

Details High voltage semiconductor devices with Schottky diodes High voltage semiconductor devices with Schottky diodes

2009-04-17

2010-11-23

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29026

Reexamination Certificate

active

07838931

ABSTRACT:
High voltage semiconductor devices with Schottky diodes are presented. A high voltage semiconductor device includes an LDMOS device and a Schottky diode device. The LDMOS device includes a semiconductor substrate, a P-body region in a first region of the substrate, and an N-drift region in the second region of the substrate with a junction therebetween. A patterned isolation region defines an active region. An anode electrode is disposed on the P-body region. An N+-doped region is disposed in the N-drift region. A cathode electrode is disposed on the N+-doped region. The Schottky diode includes an N-drift region on the semiconductor substrate. The anode electrode is disposed on the N-drift region at the first region of the substrate. The N+-doped region is disposed on the N-drift region at the second region of the substrate. The cathode electrode is disposed on the N+-doped region.

REFERENCES:
patent: 2007/0246771 (2007-10-01), McCormack et al.

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