Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2007-03-28
2009-10-13
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
C257S335000, C257S339000, C257S343000, C257SE29012, C257SE29256
Reexamination Certificate
active
07602037
ABSTRACT:
An exemplary embodiment of a semiconductor device capable of high-voltage operation includes a substrate with a well region therein. A gate stack with a first side and a second side opposite thereto, overlies the well region. Within the well region, a doped body region includes a channel region extending under a portion of the gate stack and a drift region is adjacent to the channel region. A drain region is within the drift region and spaced apart by a distance from the first side thereof and a source region is within the doped body region near the second side thereof. There is no P-N junction between the doped body region and the well region.
REFERENCES:
patent: 6303961 (2001-10-01), Shibib
patent: 7262471 (2007-08-01), Pan et al.
patent: 2002/0117714 (2002-08-01), Hebert
patent: 2005/0006701 (2005-01-01), Sung et al.
patent: 2006/0170056 (2006-08-01), Pan et al.
Chen Chi-Chih
Lin Yi-Chun
Liu Ruey-Hsin
Wu Kuo-Ming
Liu Benjamin Tzu-Hung
Ngo Ngan
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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