High voltage semiconductor device with lateral series...

Details High voltage semiconductor device with lateral series... High voltage semiconductor device with lateral series...

2007-05-10

2011-12-20

Such, Matthew W (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S257000, C438S283000, C257SE29256, C257SE21442

Reexamination Certificate

active

08080848

ABSTRACT:
According to the present invention, semiconductor device breakdown voltage can be increased by embedding field shaping regions within a drift region of the semiconductor device. A controllable current path extends between two device terminals on the top surface of a planar substrate, and the controllable current path includes the drift region. Each field shaping region includes two or more electrically conductive regions that are electrically insulated from each other, and which are capacitively coupled to each other to form a voltage divider dividing a potential between the first and second terminals. One or more of the electrically conductive regions are isolated from any external electrical contact. Such field shaping regions can provide enhanced electric field uniformity in current-carrying parts of the drift region, thereby increasing device breakdown voltage.

REFERENCES:
patent: 5075739 (1991-12-01), Davies
patent: 5111254 (1992-05-01), Levinson et al.
patent: 5204545 (1993-04-01), Terashima
patent: 5334546 (1994-08-01), Terashima
patent: 6037632 (2000-03-01), Omura et al.
patent: 6110804 (2000-08-01), Parthasarathy et al.
patent: 6190948 (2001-02-01), Seok
patent: 6310378 (2001-10-01), Letavic et al.
patent: 6353252 (2002-03-01), Yasuhara et al.
patent: 6576973 (2003-06-01), Collard et al.
patent: 6590240 (2003-07-01), Lanois
patent: 6717230 (2004-04-01), Kocon
patent: 6750506 (2004-06-01), Noda et al.
patent: 6873011 (2005-03-01), Huang et al.
patent: 6879005 (2005-04-01), Yamaguchi et al.
patent: 6897133 (2005-05-01), Collard
patent: 6903413 (2005-06-01), Lanois
patent: 6903421 (2005-06-01), Huang et al.
patent: 6989566 (2006-01-01), Noda et al.
patent: 6995428 (2006-02-01), Huang et al.
patent: 7033891 (2006-04-01), Wilson et al.
patent: 7078783 (2006-07-01), Lanois
patent: 7101739 (2006-09-01), Lanois
patent: 7208385 (2007-04-01), Hossain et al.
patent: 7282765 (2007-10-01), Xu et al.
patent: 7535057 (2009-05-01), Yang
patent: 2002/0105007 (2002-08-01), Saggio et al.
patent: 2002/0130358 (2002-09-01), Van Dalen et al.
patent: 2003/0232477 (2003-12-01), Deboy et al.
patent: 2004/0164304 (2004-08-01), Magri et al.
patent: 2005/0127434 (2005-06-01), Quoirin et al.
patent: 2005/0133858 (2005-06-01), Banerjee et al.
patent: 2005/0136613 (2005-06-01), Poveda
patent: 2006/0118833 (2006-06-01), Lanois
patent: 2006/0138450 (2006-06-01), Lanois et al.
patent: 2006/0157745 (2006-07-01), Lanois
patent: 2006/0205196 (2006-09-01), Lanois
patent: 2006/0255401 (2006-11-01), Yang et al.
patent: 2006/0267044 (2006-11-01), Yang
patent: 2007/0052060 (2007-03-01), Yang
patent: 2007/0102725 (2007-05-01), Magri' et al.
patent: 2007/0176229 (2007-08-01), Willmeroth et al.
patent: 2007/0187781 (2007-08-01), Kocon
patent: 20164 (1990-12-01), None
patent: 1073123 (2001-01-01), None
patent: 1111683 (2001-06-01), None
patent: 62-173764 (1987-07-01), None
patent: 63-296282 (1988-12-01), None
patent: 09-181109 (1997-07-01), None
patent: 2001-237423 (2001-08-01), None
patent: 2002-299622 (2002-10-01), None
patent: WO 01/59846 (2001-08-01), None
Chen et al. “Optimization of the specific on-resistance of the COOLMOS™,”IEEE Transactions on Electron Devices 48:344-348 (Feb. 2001).

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