Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-11
2011-12-06
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29261
Reexamination Certificate
active
08072029
ABSTRACT:
A high voltage semiconductor device includes a source region of a first conductivity type having an elongated projection with two sides and a rounded tip in a semiconductor substrate. A drain region of the first conductivity type is laterally spaced from the source region in the semiconductor substrate. A gate electrode extends along the projection of the source region on the semiconductor substrate between the source and drain regions. Top floating regions of a second conductivity type are disposed between the source and drain regions in the shape of arched stripes extending along the rounded tip of the projection of the source region. The top floating regions are laterally spaced from one another by regions of the first conductivity type to thereby form alternating P-N regions along the lateral dimension.
REFERENCES:
patent: 5258636 (1993-11-01), Rumennik et al.
patent: 6486512 (2002-11-01), Jeon et al.
patent: 6773997 (2004-08-01), Imam et al.
patent: 2003/0193067 (2003-10-01), Kim et al.
patent: 2004/0178443 (2004-09-01), Hossain et al.
Choi Yong-Cheol
Jeon Chang-Ki
Lee Sang-Hyun
Dickey Thomas L
Erdem Fazli
Fairchild Korea Semiconductor Ltd.
Kilpatrick Townsend & Stockton LLP
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