High voltage semiconductor device with floating regions for...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE29261

Reexamination Certificate

active

08072029

ABSTRACT:
A high voltage semiconductor device includes a source region of a first conductivity type having an elongated projection with two sides and a rounded tip in a semiconductor substrate. A drain region of the first conductivity type is laterally spaced from the source region in the semiconductor substrate. A gate electrode extends along the projection of the source region on the semiconductor substrate between the source and drain regions. Top floating regions of a second conductivity type are disposed between the source and drain regions in the shape of arched stripes extending along the rounded tip of the projection of the source region. The top floating regions are laterally spaced from one another by regions of the first conductivity type to thereby form alternating P-N regions along the lateral dimension.

REFERENCES:
patent: 5258636 (1993-11-01), Rumennik et al.
patent: 6486512 (2002-11-01), Jeon et al.
patent: 6773997 (2004-08-01), Imam et al.
patent: 2003/0193067 (2003-10-01), Kim et al.
patent: 2004/0178443 (2004-09-01), Hossain et al.

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